- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374933 > SSM6N7002FU_07 (Toshiba Corporation) High Speed Switching Applications PDF資料下載
參數(shù)資料
| 型號： | SSM6N7002FU_07 |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 174K |
| 代理商： | SSM6N7002FU_07 |
SSM6N7002FU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N7002FU
High Speed Switching Applications
Analog Switch Applications
Small package
Low ON resistance
: R
on
=
3.3
Ω
(max) (@V
GS
=
4.5 V)
: R
on
=
3.2
Ω
(max) (@V
GS
=
5 V)
: R
on
=
3.0
Ω
(max) (@V
GS
=
10 V)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
60
±
20
200
800
300
150
55~150
V
V
DC
Pulse
Drain current
mA
Drain power dissipation (Ta
=
25°C)
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 0.32mm
2
×
6)
mW
°C
°C
Marking
Equivalent Circuit
(top view)
6
5
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
NC
6
5
4
1
2
3
Q1
Q2
4
1
2
3
0.4 mm
0
1.SOURCE1
2.GATE1
3.DRAIN2
4.SOURCE2
5.GATE2
6.DRAIN1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SSM6N7002FU | High Speed Switching Applications Analog Switch Applications |
| SSM6P05FU | Power Management Switch High Speed Switching Applications |
| SSM6P09FU | High Speed Switching Applications |
| SSM6P15FE | High Speed Switching Applications |
| SSM6P15FU | Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.9 to 5.3; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSM6N7002FUTE85LF | 功能描述:MOSFET SMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6P05FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch |
| SSM6P05FU(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述: |
| SSM6P05FU(TE85LF) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P CH 0.2A 20V SOT23 |
| SSM6P05FU_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。