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參數(shù)資料
| 型號： | SSM6P15FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.9 to 5.3; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 |
| 中文描述： | 高速開關應用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 188K |
| 代理商： | SSM6P15FU |
SSM6P15FU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P15FU
High Speed Switching Applications
Analog Switch Applications
Small package
Low ON resistance : R
on
=
12
Ω
(max) (@V
GS
=
4 V)
: R
on
=
32
Ω
(max) (@V
GS
=
2.5 V)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
30
V
Gate-Source voltage
V
GSS
±
20
V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Drain power dissipation (Ta
=
25°C)
P
D
(Note 1)
200
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating.
Marking
Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
1: Source1
2: Gate1
3: Drain2
4: Source2
5: Gate2
6: Drain1
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 0.0068g(typ.)
D Q
6
5
4
1
2
3
Q1
Q2
6
5
4
1
2
3
相關PDF資料 |
PDF描述 |
|---|---|
| SSM6P16FE | Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.2 to 2.6; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 |
| SSM6P16FU | High Speed Switching Applications |
| SSM6P25TU | Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.5 to 2.9; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 |
| SSM6P26TU | High Speed Switching Applications |
| SSM6P28TU | High-Speed Switching Applications |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SSM6P15FU(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET P-CH 30V 0.1A 6-Pin US T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET Dual P-ch 30V 0.1A US6 |
| SSM6P16FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
| SSM6P16FE(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:SMALL-SIGNAL MOS FETS(DUAL) - Tape and Reel 制造商:Toshiba 功能描述:Trans MOSFET P-CH 20V 0.1A 6-Pin ES T/R |
| SSM6P16FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
| SSM6P25TU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
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