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參數(shù)資料
| 型號： | SSM3K16FV |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon N Channel MOS Type High Speed Switching Applications |
| 中文描述： | 硅?頻道馬鞍山型高速開關應用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 136K |
| 代理商： | SSM3K16FV |
SSM3K16FV
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FV
High Speed Switching Applications
Analog Switch Applications
Suitable for high-density mounting due to compact package
Low on-resistance : R
on
= 3.0
(max) (@V
GS
= 4 V)
: R
on
= 4.0
(max) (@V
GS
= 2.5 V)
: R
on
= 15
(max) (@V
GS
= 1.5 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
±
10
V
DC
Pulse
I
D
I
DP
100
200
Drain current
mA
Drain power dissipation (Ta
=
25
°
C)
P
D
(Note 1)
150
mW
Channel temperature
T
ch
150
°
C
Storage temperature
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm
×
25.4 mm
×
1.6 t)
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
nit: mm
1
0
1
2
3
0
0
0
0.8±0.05
0
1.2±0.05
0
0
JEDEC
-
JEITA
-
TOSHIBA
2-1L1B
Weight: 0.0015 g (typ.)
D S
1
2
3
1
2
3
1.Gate
2.Source
3.Drain
VESM
0.5mm
0.45mm
0.45mm
0.4mm
相關PDF資料 |
PDF描述 |
|---|---|
| SSM3K16TE | High Speed Switching Applications Analog Switch Applications |
| SSM3K16FU | High Speed Switching Applications Analog Switching Applications |
| SSM3K17FU | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| SSM3K301T | Silicon N-Channel MOS Type Power Management Switch Applications |
| SSM3K302T | Power Management Switch Applications |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SSM3K16FV(TPL3,Z) | 制造商:Toshiba America Electronic Components 功能描述: |
| SSM3K16FVTL3T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications Analog Switch Applications |
| SSM3K16TE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications Analog Switch Applications |
| SSM3K16TE_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type High Speed Switching Applications |
| SSM3K17FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
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