參數(shù)資料
型號(hào): SSM3K16FS
廠商: Toshiba Corporation
英文描述: Silicon N Channel MOS Type High Speed Switching Applications
中文描述: 硅?頻道馬鞍山型高速開(kāi)關(guān)應(yīng)用
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 150K
代理商: SSM3K16FS
SSM3K16FS
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FS
High Speed Switching Applications
Analog Switch Applications
Suitable for high-density mounting due to compact package
Low on resistance: R
on
= 3.0
(max) (@V
GS
= 4 V)
: R
on
= 4.0
(max) (@V
GS
= 2.5 V)
: R
on
= 15
(max) (@V
GS
= 1.5 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
±
10
V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Drain power dissipation (Ta
=
25°C)
P
D
100
mW
Channel temperature
T
ch
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Internal connections
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2H1B
Weight: 2.4 mg (typ.)
D S
1
2
3
1
2
3
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