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參數(shù)資料
| 型號： | SSM3K15TE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關(guān)應用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 177K |
| 代理商： | SSM3K15TE |
SSM3K15TE
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15TE
High Speed Switching Applications
Analog Switch Applications
Small package
Low on resistance
: R
on
= 4.0
(max) (@V
GS
= 4 V)
: R
on
= 7.0
(max) (@V
GS
= 2.5 V)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DS
30
V
Gate-source voltage
V
GSS
±
20
V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Drain power dissipation (Ta
=
25
°
C)
P
D
100
mW
Channel temperature
T
ch
150
°
C
Storage temperature
T
stg
55~150
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
-
JEITA
-
TOSHIBA
2-1B1B
Weight: 0.0022 g (typ.)
D P
1
2
3
1
2
3
1. Gate
2. Source
3. Drain
TESM
1.2±0.05
0.8±0.05
1
0
0
１
２
３
0
0
0
0
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