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參數(shù)資料
| 型號： | SSM3J15FV |
| 廠商： | Toshiba Corporation |
| 英文描述： | Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
| 中文描述： | 場效應晶體管硅P通道馬鞍山型高速開關(guān)應用模擬開關(guān)應用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 146K |
| 代理商： | SSM3J15FV |
SSM3J15FV
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J15FV
High Speed Switching Applications
Analog Switch Applications
Optimum for high-density mounting in small packages
Low on-resistance
: R
on
=
12
Ω
(max) (@V
GS
=
4 V)
: R
on
=
32
Ω
(max) (@V
GS
=
2.5 V)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
30
±
20
100
V
Gate-Source voltage
V
DC
Drain current
Pulse
200
mA
Drain power dissipation (Ta
=
25°C)
150
mW
Channel temperature
150
°C
Storage temperature range
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 0.585 mm
2
)
Marking
Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
1
2
3
0.80 ± 0.05
0
0
0
0
1.2 ± 0.05
1
0
0
1
0
JEDEC
―
JEITA
―
TOSHIBA
2-1L1B
Weight: 0.0015 g(typ.)
0.5mm
0.45mm
0.45mm
0.4mm
D Q
1
2
3
1
2
3
VESM
1.GATE
2.SOURCE
3.DRAIN
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSM3J15FV(TPL3,Z) | 制造商:Toshiba 功能描述:Pch -30V -100mA 14@-2.5V VESM(1.2 x 1.2) Tape & Reel 制造商:Toshiba 功能描述:Trans MOSFET P-CH 30V 0.1A 3-Pin VESM T/R |
| SSM3J15TE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
| SSM3J15TE(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P CH 0.1A 30V SOT23 |
| SSM3J15TE(TE85LF) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P CH 0.1A 30V SOT23 |
| SSM3J16CT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
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