參數資料
型號: SSM3J15F
廠商: Toshiba Corporation
英文描述: Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications
中文描述: 場效應晶體管硅P通道馬鞍山型高速開關應用模擬開關應用
文件頁數: 1/5頁
文件大小: 177K
代理商: SSM3J15F
SSM3J15F
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J15F
High Speed Switching Applications
Analog Switch Applications
Small package
Low ON resistance
: R
on
=
12
Ω
(max) (@V
GS
=
4 V)
: R
on
=
32
Ω
(max) (@V
GS
=
2.5 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
30
V
Gate-Source voltage
V
GSS
±
20
V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Drain power dissipation (Ta
=
25°C)
P
D
200
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Marking Equivalent Circuit
(top view)
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
S-MINI
1
2
1
+
0
1
2
3
0
0
+
0
+
0
0
1.5+0.25
2.5+0.5
1.Gate
2.Source
3.Drain
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012g(typ.)
D Q
1
2
1
2
3
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