參數(shù)資料
型號(hào)： SSM3J14T
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
中文描述： 東芝場(chǎng)效應(yīng)晶體管硅P通道馬鞍山型（U型MOSII）
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 179K
代理商： SSM3J14T
SSM3J14T
2002-04-17
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS
II
)
SSM3J14T
Power Management Switch
DC-DC Converters
Suitable for high-density mounting due to compact package
Low on Resistance R
on
= 145 m
(max) (@V
GS
=
4.5 V)
: R
on
= 85 m
(max) (@V
GS
=
10 V)
High-speed switching
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
30
V
Gate-Source voltage
V
GSS
20
V
DC
I
D
I
DP
(Note 2)
2.7
Drain current
Pulse
5.4
A
P
D
t 10 s
(Note 1)
1.25
0.7
Drain power dissipation
W
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
55 to 150
C
Note 1: Mounted on FR4 board
(25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm
2
)
Note 2: The pulse width limited by maximum channel temperature.
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
th (ch-a)
and the drain power dissipation P
D
vary according to the
board material, board area, board thickness and pad area, and are also affected by the environment in which the
product is used. When using this device, please take heat dissipation fully into account
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
3
1
2
KDL
3
1
2
相關(guān)PDF資料
PDF描述
SSM3J15CT Field Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications Analog Switch Applications
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SSM3J15FV Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications
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