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參數(shù)資料
| 型號： | SSM3J13T |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) |
| 中文描述： | 東芝場效應(yīng)晶體管硅P通道馬鞍山型（U型MOSII） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 182K |
| 代理商： | SSM3J13T |
SSM3J13T
2002-03-27
1
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (U-MOS
II
)
SSM3J13T
Power Management Switch
High Speed Switching Applications
Small Package
Low on Resistance R
on
= 70 m
(max) (@V
GS
=
4 V)
: R
on
= 95 m
(max) (@V
GS
=
2.5 V)
Low Gate Threshold Voltage
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
12
V
Gate-Source voltage
V
GSS
8
V
DC
I
D
I
DP
(Note 2)
3.0
Drain current
Pulse
6.0
A
Drain power dissipation
P
D
(Note 1)
1.25
W
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
55~150
C
Note 1: Mounted on FR4 board
(25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm
2
, t 10 s)
Note 2: The pulse width limited by max channel temperature.
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
th (ch-a)
and the drain power dissipation P
D
vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
3
1
2
KDH
3
1
2
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