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參數(shù)資料
| 型號： | SSM3J120TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | Field Effect Transistor Silicon P Channel MOS Type Power Management Switch Applications High-Current Switching Applications |
| 中文描述： | 場效應晶體管硅P通道馬鞍山開關(guān)式電源管理應用的高電流開關(guān)應用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 204K |
| 代理商： | SSM3J120TU |
SSM3J120TU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J120TU
○
Power Management Switch Applications
○
High-Current Switching Applications
1.5 V drive
Low on-resistance
R
on
= 140 m
(max) (@V
GS
= -1.5 V)
R
on
= 78 m
(max) (@V
GS
= -1.8 V)
R
on
= 49 m
(max) (@V
GS
= -2.5 V)
R
on
= 38 m
(max) (@V
GS
= -4.0 V)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
-20
V
Gate-Source voltage
±
8
V
DC
-4.0
Drain current
Pulse
-8.0
A
800
Drain power dissipation
P
D
(Note 2)
500
mW
Channel temperature
T
ch
T
stg
150
°
C
°
C
Storage temperature
55~150
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1 : Mounted on ceramic board
(25.4 mm
×
25.4 mm
×
0.8 t, Cu Pad: 645 mm
2
)
Note 2 : Mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
Y
fs
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
=
+8 V
V
DS
=
20 V, V
GS
= 0
V
GS
=
±
8 V, V
DS
=
0
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
-3 V, I
D
=
-2.0 A (Note 3)
I
D
=
-3.0 A, V
GS
=
-4.0 V (Note 3)
I
D
=
-2.0 A, V
GS
=
-2.5 V (Note 3)
I
D
=
-1.0 A, V
GS
=
-1.8 V (Note 3)
I
D
=
-0.3 A, V
GS
=
-1.5 V (Note 3)
20
12
Drain-Source breakdown voltage
V
Drain cut-off current
0.3
10
±
1
1.0
μ
A
μ
A
Gate leakage current
Gate threshold voltage
V
Forward transfer admittance
6.1
12.1
S
28
38
34
49
47
78
Drain-Source ON-resistance
R
DS (ON)
60
140
m
Ω
Input capacitance
C
iss
C
oss
C
rss
t
on
1484
pF
Output capacitance
185
pF
Reverse transfer capacitance
V
DS
=
10 V, V
GS
=
0
f
=
1 MHz
169
pF
Turn-on time
67
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
2.0 A
V
GS
=
0 ~
2.5 V, R
G
=
4.7
Ω
92
ns
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6mg (typ.)
1. Gate
2. Source
3. Drain
-
0
1.7±0.1
2.1±0.1
0
1
2
2
3
0
+
0
UFM
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