參數(shù)資料
型號： SN65HVD
廠商： Texas Instruments, Inc.
英文描述： 3.3-V RS-485 Transceivers(3.3V,RS-485收發(fā)器)
中文描述： 3.3V的RS - 485收發(fā)器（3.3V，RS - 485接口收發(fā)器）
文件頁數(shù)： 2/19頁
文件大小： 142K
代理商： SN65HVD
SN65HVD10,SN65HVD10Q,SN75HVD10
SN65HVD11,SN65HVD11Q,SN75HVD11
SN65HVD12,SN75HVD12
SLLS505E
–
FEBRUARY 2002
–
REVISED NOVEMBER 2002
www.ti.com
2
These devices have imited built-in ESD protection. The eads should be shorted together or the device placed n conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
SIGNALING
RATE
UNIT LOADS
TA
PACKAGE
SOIC MARKING
SOIC(1)
SN65HVD10D
PDIP
25 Mbps
1/2
SN65HVD10P
VP10
10 Mbps
1/8
–
40 C to 85 C
SN65HVD11D
SN65HVD11P
VP11
1 Mbps
1/8
SN65HVD12D
SN65HVD12P
VP12
25 Mbps
1/2
SN75HVD10D
SN75HVD10P
VN10
10 Mbps
1/8
–
0 C to 70 C
SN75HVD11D
SN75HVD11P
VN11
1 Mbps
1/8
SN75HVD12D
SN75HVD12P
VN12
25 Mbps
1/2
–
40
°
C to 125
°
C
SN65HVD10QD
–
VP10Q
10 Mbps
(1)The D package is available taped and reeled. Add an R suffix to the part number (i.e., SN75HVD11DR).
1/8
SN65HVD11QD
–
VP11Q
PACKAGE DISSIPATION RATINGS
TA
≤
25
°
C
POWER RATING
PACKAGE
DERATING
FACTOR(1) ABOVE
TA = 25
°
C
5.8 mW/
°
C
10.3 mW/
°
C
9.2 mW/
°
C
TA = 70
°
C
POWER RATING
TA = 85
°
C
POWER RATING
TA = 125
°
C
POWER RATING
D(2)
D(3)
725 mW
464 mW
377 mW
145 mW
1282 mW
822 mW
667 mW
255 mW
P
1150 mW
736 mW
598 mW
–
(1)This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.
(2)Tested in accordance with the Low-K thermal metric definitions of EIA/JESD51
–
3.
(3)Tested in accordance with the High-K thermal metric definitions of EIA/JESD51
–
7.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1) (2)
SN65HVD10, SN75HVD10
SN65HVD11, SN75HVD11
SN65HVD12, SN75HVD12
Supply voltage range, VCC
Voltage range at A or B
–
0.3 V to 6 V
–
9 V to 14 V
Input voltage range at D, DE, R or RE
Voltage input range, transient pulse, A and B, through 100
(see Figure 11)
–
0.5 V to VCC + 0.5 V
–
50 V to 50 V
Humanbodymodel(3)
Human body model(3)
A, B and GND
16 kV
Electrostatic discharge
All pins
4 kV
Charged-device model(4)
All pinsCharge
1 kV
Continuous total power dissipation
See Dissipation Rating Table
–
65
°
C to 150
°
C
260
°
C
Storage temperature range, Tstg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
(1)Stresses beyond those isted under
“
absolute maximum ratings
”
may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under
“
recommended operating conditions
”
is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
(3)Tested in accordance with JEDEC Standard 22, Test Method A114-A.
(4)Tested in accordance with JEDEC Standard 22, Test Method C101.
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相關代理商/技術參數(shù)
參數(shù)描述
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