參數(shù)資料
型號： SM8580
廠商： Seiko NPC Corporation
元件分類： 溫度/濕度傳感器
英文描述： Real-time Clock IC with 4-bit Interface and Built-in Temperature Sensor
中文描述： 實(shí)時時鐘集成電路溫度傳感器與4位接口和內(nèi)置
文件頁數(shù)： 5/23頁
文件大?。?/td> 179K
代理商： SM8580
SM8580AM
NIPPON PRECISION CIRCUITS—5
DC Electrical Characteristics
V
SS
= 0V, V
DD
= 1.6 to 5.5V, T
a
=
40 to 85
°
C unless otherwise noted
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
Current consumption 1
I
DD1
V
DD
= 5V
CE0N = RDN = WRN = V
A0 to A3 = D0 to D3 = V
CE1 = FCON = V
AIRQN = TIRQN = FOUT = V
VTEMP output OFF (TEMP bit = 0)
DD
or V
,
DD
SS
,
SS
,
DD
,
–
1.0
2.0
μA
Current consumption 2
I
DD2
V
DD
= 3V
–
0.6
1.0
μA
Current consumption 3
I
DD3
V
DD
= 5V
Ta = 25
CE0N = RDN = WRN = V
A0 to A3 = D0 to D3 = V
CE1 = FCON = V
AIRQN = TIRQN = FOUT = V
VTEMP output ON (TEMP bit = 1)
°
C,
DD
or V
,
DD
SS
,
SS
,
DD
,
–
50
75
μA
Current consumption 4
I
DD4
V
DD
= 3V
–
40
60
μA
Current consumption 5
I
DD5
V
DD
= 5V
CE0N = CE1 = RDN = WRN = V
A0 to A3 = D0 to D3 = V
FCON = V
SS
AIRQN = TIRQN = FOUT = VTEMP = Hi-Z,
VTEMP output OFF (TEMP bit = 0),
FOUT = 32kHz output, C
DD
,
SS
,
,
L
= 0pF
–
3.0
7.5
μA
Current consumption 6
I
DD6
V
DD
= 3V
–
1.7
4.5
μA
Current consumption 7
I
DD7
V
DD
= 5V
CE0N = CE1 = RDN = WRN = V
A0 to A3 = D0 to D3 = V
FCON = V
SS
AIRQN = TIRQN = FOUT = VTEMP = Hi-Z,
VTEMP output OFF (TEMP bit = 0),
FOUT = 32kHz output, C
DD
,
SS
,
,
L
= 30pF
–
8.0
20
μA
Current consumption 8
I
DD8
V
DD
= 3V
–
5.0
12
μA
HIGH-level input voltage 1
V
IH1
V
CE0N, FCON, RDN, WRN, A0 to A3, D0 to D3
DD
= 4.5 to 5.5V,
2.2
–
V
DD
+ 0.3
V
LOW-level input voltage 1
V
IL1
V
SS
0.3
–
0.8
V
HIGH-level input voltage 2
V
IH2
V
CE0N, FCON, RDN, WRN, A0 to A3, D0 to D3
DD
= 2.4 to 3.6V,
0.8V
DD
–
V
DD
+ 0.3
V
LOW-level input voltage 2
V
IL2
V
SS
0.3
–
0.2V
DD
V
HIGH-level input voltage 3
V
IH3
V
CE1
DD
= 1.6 to 5.5V,
0.8V
DD
–
V
DD
+ 0.3
V
LOW-level input voltage 3
V
IL3
V
SS
0.3
–
0.2V
DD
V
Input leakage current
I
LEAK
CE0N = V
FCON = RDN = WRN = A0 to A3 = V
DD
, CE1 = V
SS
,
DD
or V
SS
0.5
–
0.5
μA
Pull-up resistance 1
R
UP1
V
DD
= 5V
CE0N = V
SS
75
150
300
k
Pull-up resistance 2
R
UP2
V
DD
= 3V
150
300
600
k
Pull-down resistance 1
R
DWN1
V
DD
= 5V
CE1 = V
DD
20
40
80
M
Pull-down resistance 2
R
DWN2
V
DD
= 3V
42.5
85
170
M
Pull-down resistance 3
R
DWN3
V
DD
= 5V
CE1 = 0.5V
30
60
120
k
Pull-down resistance 4
R
DWN4
V
DD
= 3V
55
110
220
k
HIGH-level output voltage 1
V
OH1
V
DD
= 5V
I
OH
=
1mA, D0 to D3, FOUT
4.5
–
5.0
V
HIGH-level output voltage 2
V
OH2
V
DD
= 3V
2.0
–
3.0
V
HIGH-level output voltage 3
V
OH3
V
DD
= 3V
I
OH
=
100μA, D0 to D3, FOUT
2.9
–
3.0
V
LOW-level output voltage 1
V
OL1
V
DD
= 5V
I
OL
= 1mA, D0 to D3, FOUT
0
–
0.5
V
LOW-level output voltage 2
V
OL2
V
DD
= 3V
0
–
0.8
V
LOW-level output voltage 3
V
OL3
V
DD
= 3V
I
OL
= 100μA, D0 to D3, FOUT
0
–
0.1
V
LOW-level output voltage 4
V
OL4
V
DD
= 5V
I
OL
= 1mA, AIRQN, TIRQN
0
–
0.25
V
LOW-level output voltage 5
V
OL5
V
DD
= 3V
0
–
0.4
V
Output leakage current
I
OZ
D0 to D3, AIRQN, TIRQN, FOUT, V
OUT
= V
DD
or V
SS
0.5
–
0.5
μA
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