參數(shù)資料
型號: SM5009AL3S
廠商: Seiko NPC Corporation
英文描述: Crystal Oscillator Module ICs
中文描述: 晶體振蕩器模塊集成電路
文件頁數(shù): 5/18頁
文件大小: 163K
代理商: SM5009AL3S
SM5009 series
NIPPON PRECISION CIRCUITS—5
Electrical Characteristics
5009AH series
3 V operation: V
DD
= 2.7 to 3.3 V, V
SS
= 0 V, Ta =
20 to 80
°
C unless otherwise noted.
5 V operation: V
DD
= 4.5 to 5.5 V, V
SS
= 0 V, Ta =
40 to 85
°
C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage
V
OH
Q: Measurement cct 1, I
OH
= 2 mA
2.2
V
LOW-level output voltage
V
OL
Q: Measurement cct 1, I
OL
= 2 mA
0.4
V
Output leakage current
I
Z
Q: Measurement cct 2, INH = LOW, V
OH
= V
DD
10
μA
Q: Measurement cct 2, INH = LOW, V
OL
= V
SS
10
HIGH-level input voltage
V
IH
INH
2.0
V
LOW-level input voltage
V
IL
INH
0.3
V
Current consumption
I
DD
INH = open, Measurement cct 3,
load cct 2, C
L
= 15 pF,
16 MHz crystal oscillator
SM5009AH1S
CF5009AH1
4.5
10
mA
SM5009AH2S
CF5009AH2
3
7
SM5009AH3S
CF5009AH3
SM5009AH4S
CF5009AH4
1.5
3
INH pull-up resistance
R
UP
R
L
Measurement cct 4, V
DD
= 3 V, INH = V
SS
V
DD
= 3 V, Ta = 25
°
C, 16 MHz
40
200
k
Negative resistance
–450
Feedback resistance
R
f
Measurement cct 5
0.4
1.1
M
Built-in capacitance
C
G
Design value, determined by the internal wafer pattern
5.58
6
6.42
pF
C
D
9.3
10
10.7
pF
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage
V
OH
Q: Measurement cct 1, I
OH
= 4 mA
4.0
V
LOW-level output voltage
V
OL
Q: Measurement cct 1, I
OL
= 4 mA
0.4
V
Output leakage current
I
Z
Q: Measurement cct 2, INH = LOW, V
OH
= V
DD
10
μA
Q: Measurement cct 2, INH = LOW, V
OL
= V
SS
10
HIGH-level input voltage
V
IH
INH
2.0
V
LOW-level input voltage
V
IL
INH
0.8
V
Current consumption
I
DD
INH = open, Measurement cct 3,
load cct 2, C
L
= 15 pF,
30 MHz crystal oscillator
SM5009AH1S
CF5009AH1
9
20
mA
SM5009AH2S
CF5009AH2
6
13
SM5009AH3S
CF5009AH3
SM5009AH4S
CF5009AH4
4
9
INH pull-up resistance
R
UP
R
L
Measurement cct 4, V
DD
= 5 V, INH = V
SS
V
DD
= 5 V, Ta = 25
°
C, 30 MHz
40
200
k
Negative resistance
–340
Feedback resistance
R
f
Measurement cct 5
0.4
1.1
M
Built-in capacitance
C
G
Design value, determined by the internal wafer pattern
5.58
6
6.42
pF
C
D
9.3
10
10.7
pF
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