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參數(shù)資料
| 型號： | SIF912EDZ |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | ESD-protected bidirectional N-Ch. MOSFET for battery protection circuits |
| 中文描述： | ESD保護雙向P溝道MOSFET，用于電池保護電路 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 65K |
| 代理商： | SIF912EDZ |
SiF912EDZ
Vishay Siliconix
www.vishay.com
2
Document Number: 72952
S-50131—Rev. B, 24-Jan-05
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 0 V, V
GS
=
0.6
1.5
V
Gate Body Leakage
Gate-Body Leakage
I
GSS
4.5 V
10
V
DS
= 0 V, V
GS
=
12 V
500
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 C
V
DS
= 5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
=7.4 A
V
GS
= 4.0 V, I
D
=
7.3
A
V
GS
= 3.1 V, I
D
= 6.8
A
V
GS
= 2.5 V, I
D
= 3.5
A
V
DS
= 10 V, I
D
= 7.4 A
I
S
= 2.9 A, V
GS
= 0 V
1
5
On-State Drain Current
a
I
D(on)
40
A
0.0155
0.019
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
0.016
0.0195
0.018
0.022
0.022
0.027
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
37
0.75
S
V
1.1
Dynamic
b
Total Gate Charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
9.8
15
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
= 15 V,
V
= 4.5 V, I
= 7.4 A
DS
GS
2.5
2.9
0.53
0.70
8.0
3.4
nC
D
0.8
1.1
12
5
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
= 6
s
I
D
g
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.0001
100
100,000
Gate Current vs. Gate-Source Voltage
0
4
8
12
16
0
2
4
6
8
10
12
14
16
Gate-Current vs. Gate-Source Voltage
V
GS
Gate-to-Source Voltage (V)
0.1
1
10
1,000
V
GS
Gate-to-Source Voltage (V)
I
G
A
0
3
6
9
52
T
J
= 25 C
T
J
= 150 C
I
G
10,000
0.01
0.001
12
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