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參數(shù)資料
| 型號： | SIF912EDZ |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | ESD-protected bidirectional N-Ch. MOSFET for battery protection circuits |
| 中文描述： | ESD保護雙向P溝道MOSFET，用于電池保護電路 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 65K |
| 代理商： | SIF912EDZ |
FEATURES
TrenchFET Power MOSFET: 2.5-V Rated
ESD Protected: 3000 V
APPLICATIONS
Battery Protection Circuitry
1-Cell Li-Ion Battery Pack
LiB/LiP
Lithium-Polymer
SiF912EDZ
Vishay Siliconix
Document Number: 72952
S-50131—Rev. B, 24-Jan-05
www.vishay.com
1
Bi-Directional N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.019 @ V
GS
= 4.5 V
10.7
30
0.0195 @ V
GS
= 4.0 V
10.5
0.022 @ V
GS
= 3.1 V
9.9
0.027 @ V
GS
= 2.5 V
9.0
Marking Code
PowerPAK 2 x 5
S
1
S
1
G
1
S
2
S
2
G
2
1
2
3
4
5
6
MCXYZ
MC: Part # Code
XYZ: Lot Traceability and Date Code
Ordering Information: SiF912EDZ-T1—E3
D
1
S
1
G
1
2.6 k
D
2
S
2
G
2
2.6 k
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
10.7
7.4
T
A
= 85 C
7.7
5.3
A
Pulsed Drain Current (V
GS
= 8 V)
I
DM
80
Continuous Diode Current (Diode Conduction)
a
I
S
2.9
1.3
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.5
1.6
W
T
A
= 85 C
1.8
0.86
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
30
36
Steady State
61
76
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
4.5
5.6
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIF912EDZ-T1-E3 | 功能描述:MOSFET N-CH 30V 2X5 6-POWERPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:TrenchFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| SIF912EDZ-T1-GE3 | 功能描述:MOSFET 30V 10.7A 3.5W 19mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SIFS-1 | 制造商:3M Electronic Products Division 功能描述:80610596555 SIFS-1 FIRRING STRIP STAK-IT |
| SIFU310 | 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET |
| SIFX1300ADJ-E2 | 制造商:Vishay Siliconix 功能描述:10AMP HIGH EFFICIENCY DC-DC POWER MODULE - Bulk |
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