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參數(shù)資料
| 型號： | SIF912EDZ-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 65K |
| 代理商： | SIF912EDZ-T1-E3 |
SiF912EDZ
Vishay Siliconix
www.vishay.com
4
Document Number: 72952
S-50131—Rev. B, 24-Jan-05
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.6
0.4
0.2
0.0
0.2
0.4
50
25
0
25
50
75
100
125
150
I
D
= 250 A
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0
1
2
3
4
5
I
D
= 7.4 A
Threshold Voltage
V
V
G
T
J
Temperature ( C)
On-Resistance vs. Gate-to-Source Voltage
r
D
)
V
GS
Gate-to-Source Voltage (V)
0
0.001
10
50
P
Single Pulse Power, Junction-to-Ambient
Time (sec)
30
40
10
3
10
2
1
10
600
10
1
10
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 61 C/W
3. T
JM
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
0.1
1000
1
0.01
20
Safe Operating Area
100
1
0.1
1
10
100
0.01
10
T
= 25 C
Single Pulse
I
D
P(t) = 10
dc
0.1
I
DM
Limited
I
Limited
*r
DS(on)
Limited
BV
DSS
Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
I
D
= 5 A
10
100
V
DS
Drain-to-Source Voltage (V)
minimum V
GS
at which r
DS(on)
is
specified
*V
GS
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SIF912EDZ-T1-GE3 | 功能描述:MOSFET 30V 10.7A 3.5W 19mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SIFS-1 | 制造商:3M Electronic Products Division 功能描述:80610596555 SIFS-1 FIRRING STRIP STAK-IT |
| SIFU310 | 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET |
| SIFX1300ADJ-E2 | 制造商:Vishay Siliconix 功能描述:10AMP HIGH EFFICIENCY DC-DC POWER MODULE - Bulk |
| SIG01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GENERAL-USE RECTIFIER DIODE |
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