- 您現(xiàn)在的位置：買賣IC網 > PDF目錄365565 > SIF912EDZ-T1-E3 (Vishay Intertechnology,Inc.) Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PDF資料下載
參數(shù)資料
| 型號： | SIF912EDZ-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 65K |
| 代理商： | SIF912EDZ-T1-E3 |
SiF912EDZ
Vishay Siliconix
www.vishay.com
2
Document Number: 72952
S-50131—Rev. B, 24-Jan-05
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 0 V, V
GS
=
0.6
1.5
V
Gate Body Leakage
Gate-Body Leakage
I
GSS
4.5 V
10
V
DS
= 0 V, V
GS
=
12 V
500
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 C
V
DS
= 5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
=7.4 A
V
GS
= 4.0 V, I
D
=
7.3
A
V
GS
= 3.1 V, I
D
= 6.8
A
V
GS
= 2.5 V, I
D
= 3.5
A
V
DS
= 10 V, I
D
= 7.4 A
I
S
= 2.9 A, V
GS
= 0 V
1
5
On-State Drain Current
a
I
D(on)
40
A
0.0155
0.019
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
0.016
0.0195
0.018
0.022
0.022
0.027
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
37
0.75
S
V
1.1
Dynamic
b
Total Gate Charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
9.8
15
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
= 15 V,
V
= 4.5 V, I
= 7.4 A
DS
GS
2.5
2.9
0.53
0.70
8.0
3.4
nC
D
0.8
1.1
12
5
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
= 6
s
I
D
g
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.0001
100
100,000
Gate Current vs. Gate-Source Voltage
0
4
8
12
16
0
2
4
6
8
10
12
14
16
Gate-Current vs. Gate-Source Voltage
V
GS
Gate-to-Source Voltage (V)
0.1
1
10
1,000
V
GS
Gate-to-Source Voltage (V)
I
G
A
0
3
6
9
52
T
J
= 25 C
T
J
= 150 C
I
G
10,000
0.01
0.001
12
相關PDF資料 |
PDF描述 |
|---|---|
| SII0680A | PCI to IDE/ATA |
| SiI0680ACL144 | PCI to IDE/ATA |
| SiI0680ACLU144 | PCI to IDE/ATA |
| SII0680 | SteelVine⑩ Host Controller |
| SII1000 | PanelLink Receivers |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SIF912EDZ-T1-GE3 | 功能描述:MOSFET 30V 10.7A 3.5W 19mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SIFS-1 | 制造商:3M Electronic Products Division 功能描述:80610596555 SIFS-1 FIRRING STRIP STAK-IT |
| SIFU310 | 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET |
| SIFX1300ADJ-E2 | 制造商:Vishay Siliconix 功能描述:10AMP HIGH EFFICIENCY DC-DC POWER MODULE - Bulk |
| SIG01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GENERAL-USE RECTIFIER DIODE |
發(fā)布緊急采購，3分鐘左右您將得到回復。