參數(shù)資料
型號: SI9934DY
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual P-Channel 2.5V Specified PowerTrench MOSFET
中文描述: 5 A, 20 V, 0.05 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 2/5頁
文件大?。?/td> 55K
代理商: SI9934DY
Si9934BDY
Vishay Siliconix
www.vishay.com
2
Document Number: 72525
S-41578—Rev. C, 23-Aug-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
0.6
1.4
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
12 V, V
GS
= 0 V
1
A
V
DS
=
12 V, V
GS
= 0 V, T
J
= 55 C
5
On-State Drain Current
a
I
D(on)
V
DS
=
5 V, V
GS
=
4.5 V
20
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
4.5 V, I
D
=
6.4 A
0.028
0.035
V
GS
=
2.5 V, I
D
=
1.8 A
0.044
0.056
Forward Transconductance
a
g
fs
V
DS
=
10
V, I
D
=
6.4 A
17
S
Diode Forward Voltage
a
V
SD
I
S
=
1.7 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
13
20
Gate-Source Charge
Q
gs
V
DS
= 6 V,
V
GS
=
4.5 V, I
D
=
6.4 A
2.6
nC
Gate-Drain Charge
Q
gd
R
g
t
d(on)
4.0
Gate Resistance
9
Turn-On Delay Time
19
30
Rise Time
t
r
V
= 6 V, R
= 6
1 A, V
GEN
=
4.5 V, R
g
= 6
35
55
Turn-Off Delay Time
t
d(off)
I
D
80
120
ns
Fall Time
t
f
50
75
Source-Drain Reverse Recovery Time
t
rr
I
F
=
1.7 A, di/dt = 100 A/ s
40
80
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
0
1
2
3
4
5
V
GS
= 5 thru 3 V
T
C
= 125 C
55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
2 V
1.5 V
2.5 V
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