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參數(shù)資料
| 型號： | SI9424DY |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Single P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 0.024 ohm, Si, POWER, FET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | SI9424DY |
Si9424BDY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72015
S-21785
—
Rev. A, 07-Oct-02
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-0.45
-0.85
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
9
V
100
nA
V
DS
= -16 V, V
GS
= 0 V
-1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -16 V, V
GS
= 0 V, T
J
= 55 C
-5
A
On-State Drain Current
a
I
D(on)
V
DS
-5 V, V
GS
= -4.5 V
-30
A
V
GS
= -4.5 V, I
D
= -7.1 A
0.014
0.025
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -6.6 A
0.019
0.033
Forward Transconductance
a
g
fs
V
DS
= -10
V, I
D
= -7.7 A
25
S
Diode Forward Voltage
a
V
SD
I
S
= -2.3 A, V
GS
= 0 V
-0.7
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
24
40
Gate-Source Charge
Q
gs
V
DS
= -6 V,
V
GS
= -4.5 V, I
D
= -7.1 A
3.5
nC
Gate-Drain Charge
Q
gd
5.8
Turn-On Delay Time
t
d(on)
30
45
Rise Time
t
r
V
= -6 V, R
= 6
-1 A, V
GEN
= -4.5 V, R
G
= 6
40
60
Turn-Off Delay Time
t
d(off)
I
D
130
200
ns
Fall Time
t
f
70
105
Source-Drain Reverse Recovery Time
t
rr
I
F
= -2.3 A, di/dt = 100 A/ s
50
100
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
0
6
12
18
24
30
0
1
2
3
4
5
V
GS
= 4.5 thru 2 V
T
C
= 125 C
-55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
1.5 V
1 V
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