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參數(shù)資料
| 型號： | SI9422DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Reduced Qg, Fast Switching MOSFET |
| 中文描述： | N溝道減少Q(mào)g和，快速開關MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 53K |
| 代理商： | SI9422DY |
Si9422DY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70793
S-59610—Rev. D, 23-Nov-98
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160 V, V
GS
= 0 V
1
A
V
DS
= 160 V, V
GS
= 0 V, T
J
= 55 C
25
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
5
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 1.7 A
0.340
0.420
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 1.7 A
3.5
S
Diode Forward Voltage
a
V
SD
I
S
= 2.1 A, V
GS
= 0 V
0.95
1.2
V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 100 V V
V
GS
= 10 V, I
D
= 1.7 A
10 V I
1 7 A
13
25
Gate-Source Charge
Q
gs
3.5
nC
Gate-Drain Charge
Q
gd
4.5
Turn-On Delay Time
t
d(on)
V
= 100 V, R
= 100
1 A V
1 A, V
GEN
= 10 V, R
G
= 6
100 V R
10
20
Rise Time
t
r
I
D
10 V R
10
20
Turn-Off Delay Time
t
d(off)
20
40
ns
Fall Time
t
f
25
50
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.1 A, di/dt = 100 A/ s
115
150
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
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