參數(shù)資料
型號: SI7958DP
廠商: Vishay Intertechnology,Inc.
英文描述: Dual N-Channel 40-V (D-S) MOSFET
中文描述: 雙N通道40V(D-S)MOSFET
文件頁數(shù): 3/5頁
文件大?。?/td> 77K
代理商: SI7958DP
Si7958DP
Vishay Siliconix
New Product
Document Number: 72661
S-32677—Rev. A, 29-Dec-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.0
8.0
16.0
24.0
32.0
40.0
r
D
)
0
500
1000
1500
2000
2500
3000
3500
4000
0
8
16
24
32
40
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50
25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
10
20
30
40
50
V
DS
Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 20 V
I
D
= 11.3 A
I
D
Drain Current (A)
V
GS
= 10 V
I
D
= 11.3 A
V
GS
= 10 V
V
GS
= 4.5 V
Gate Charge
On-Resistance vs. Drain Current
Q
g
Total Gate Charge (nC)
C
V
G
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature ( C)
(
r
D
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.01
0.02
0.03
0.04
0.05
0
2
4
6
8
10
T
J
= 150 C
T
J
= 25 C
40
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
r
D
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
I
S
I
D
= 11.3 A
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