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參數(shù)資料
| 型號： | SI7958DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Channel 40-V (D-S) MOSFET |
| 中文描述： | 雙N通道40V（D-S）MOSFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 77K |
| 代理商： | SI7958DP |
Si7958DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72661
S-32677—Rev. A, 29-Dec-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
3
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V
1
A
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 10
V
5
On-State Drain Current
a
I
D(on)
V
DS
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 11.3 A
0.013
0.0165
V
GS
= 4.5 V, I
D
= 10.3 A
0.016
0.020
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 11.3 A
30
S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
50
75
Gate-Source Charge
Q
gs
V
DS
= 20 V,
V
GS
= 10 V, I
D
= 11.3 A
8.8
nC
Gate-Drain Charge
Q
gd
10.4
Gate Resostamce
R
g
f = 1 MHz
1.9
Turn-On Delay Time
t
d(on)
17
30
Rise Time
t
r
V
= 20 V, R
= 20
1 A, V
GEN
= 10 V, R
g
= 6
17
30
Turn-Off Delay Time
t
d(off)
I
D
66
100
ns
Fall Time
t
f
17
30
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ s
31
60
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
8
16
24
32
40
0
1
2
3
4
5
V
GS
= 10 thru 4 V
T
C
= 125 C
55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
3 V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI7958DP-T1 | 制造商:Vishay Siliconix 功能描述:DUAL N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel |
| SI7958DP-T1-E3 | 功能描述:MOSFET DUAL N-CH 40V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7958DP-T1-GE3 | 功能描述:MOSFET Dual N-Ch 40V 16.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7960DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 60-V (D-S) MOSFET |
| SI7960DP-T1-E3 | 功能描述:MOSFET DUAL N-CH 60V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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