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參數(shù)資料
| 型號： | SI7958DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Channel 40-V (D-S) MOSFET |
| 中文描述： | 雙N通道40V（D-S）MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 77K |
| 代理商： | SI7958DP |
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Dual MOSFET for Space Savings
Package
APPLICATIONS
Automotive*
12-V Boardnet
Motor Drives
High-Side Switch
*Contact factory for automotive qualification
Si7958DP
Vishay Siliconix
New Product
Document Number: 72661
S-32677—Rev. A, 29-Dec-03
www.vishay.com
1
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
40
0.0165 @ V
GS
= 10 V
0.020 @ V
GS
= 4.5 V
11.3
10.3
N-Channel MOSFET
D
1
G
1
S
1
N-Channel MOSFET
D
2
G
2
S
2
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerPAK SO-8
Ordering Information:
Si7958DP-T1—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
D
I
11.3
7.2
T
A
= 70 C
9.0
5.8
Pulsed Drain Current
I
DM
40
A
Continuous Source Current (Diode Conduction)
a
I
S
2.9
1.2
Single Avalanche Current
L = 0.1 mH
I
AS
35
Single Avalanche Energy
E
AS
61
mJ
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.5
1.4
W
T
A
= 70 C
2.2
0.9
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
t
a
t
10 sec
R
thJA
26
35
Steady State
60
85
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
2.2
2.7
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7958DP-T1 | 制造商:Vishay Siliconix 功能描述:DUAL N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel |
| SI7958DP-T1-E3 | 功能描述:MOSFET DUAL N-CH 40V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7958DP-T1-GE3 | 功能描述:MOSFET Dual N-Ch 40V 16.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7960DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 60-V (D-S) MOSFET |
| SI7960DP-T1-E3 | 功能描述:MOSFET DUAL N-CH 60V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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