參數(shù)資料
型號: SI7464DP
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 6-V (D-S) Fast Switching MOSFET
中文描述: N溝道6 V的(副)快速開關MOSFET
文件頁數(shù): 2/3頁
文件大小: 182K
代理商: SI7464DP
SPICE Device Model Si7464DP
Vishay Siliconix
www.vishay.com
2
Document Number: 70326
25-May-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.9
V
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
26
A
V
GS
= 10 V, I
D
= 2.8 A
0.192
0.195
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 6 V, I
D
= 2.7 A
0.199
0.210
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 2.8 A
6.1
8
S
Diode Forward Voltage
a
Dynamic
b
V
SD
I
S
= 3.5 A, V
GS
= 0 V
0.74
0.8
V
Total Gate Charge
Q
g
13
12
Gate-Source Charge
Q
gs
2.5
2.5
Gate-Drain Charge
Q
gd
V
DS
= 100 V, V
GS
= 10 V, I
D
= 2.8 A
3.8
3.8
nC
Turn-On Delay Time
t
d(on)
14
10
Rise Time
t
r
12
12
Turn-Off Delay Time
t
d(off)
8
15
Fall Time
t
f
V
DD
= 100 V, R
L
= 100
I
D
1 A, V
GEN
= 10 V, R
G
= 6
10
15
Source-Drain Reverse Recovery Time
t
rr
I
F
= 3.5 A, di/dt = 100 A/
μ
s
53
60
Ns
Notes
a. Pulse test; pulse width
300
μ
s, duty cycle
2%.
b. Guaranteed by design, not subject to production testing.
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