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參數(shù)資料
| 型號(hào)： | SI7458DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) Fast Switching MOSFET |
| 中文描述： | N溝道20 - V（下局副局長(zhǎng)）快速開(kāi)關(guān)MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 51K |
| 代理商： | SI7458DP |
Si7458DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71821
S-20012
—
Rev. A, 04-Mar-02
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
1.4
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
V
DS
= 16 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 C
5 V, V
GS
= 4.5
V
20
A
On-State Drain Current
a
I
D(on)
V
DS
50
A
V
GS
= 4.5
V, I
D
= 22 A
0.0035
0.0045
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 19 A
0.006
0.0075
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 22 A
90
S
Diode Forward Voltage
a
V
SD
I
S
= 3 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
38
50
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 21 A
8
nC
Gate-Drain Charge
Q
gd
8.5
Gate-Resistance
R
G
0.9
Turn-On Delay Time
t
d(on)
22
35
Rise Time
t
r
V
= 10 V, R
= 10
1 A, V
GEN
= 10 V, R
G
= 6
22
35
Turn-Off Delay Time
t
d(off)
I
D
125
190
ns
Fall Time
t
f
60
90
Source-Drain Reverse Recovery Time
t
rr
I
F
= 3 A, di/dt = 100 A/ s
60
90
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
2.5
0
10
20
30
40
50
0
1
2
3
4
5
V
GS
= 4.5 thru 2.5 V
25 C
T
C
= 125 C
2 V
–
55 C
1.5 V
Output Characteristics
Transfer Characteristics
V
DS
–
Drain-to-Source Voltage (V)
–
I
D
V
GS
–
Gate-to-Source Voltage (V)
–
I
D
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