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參數(shù)資料
| 型號(hào)： | SI7392DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V |
| 中文描述： | N溝道低Qg，快速開關(guān)WFET ® ，VDS=30V; VGS=±20V |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 56K |
| 代理商： | SI7392DP |
FEATURES
Extremely Low Q
gd
WFET Technology for
Low Switching Losses
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
100% R
g
Tested
APPLICATIONS
High-Side DC/DC Conversion
Notebook
Server
Si7392DP
Vishay Siliconix
Document Number: 72165
S-41427—Rev. D, 26-Jul-04
www.vishay.com
1
N-Channel Reduced Q
g
, Fast Switching WFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.00975 @ V
GS
= 10 V
0.01375 @ V
GS
= 4.5 V
15
13
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
N-Channel MOSFET
G
D
S
Ordering Information: Si7392DP-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
15
9
T
A
= 70 C
12
7
A
Pulsed Drain Current
I
DM
50
Continuous Source Current (Diode Conduction)
a
I
S
4.1
1.5
Maximum Power Dissipation
a
T
A
= 25 C
P
D
5
1.8
W
T
A
= 70 C
3.2
1.1
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient (MOSFET)
Maximum Junction-to-Ambient (MOSFET)
a
t
10 sec
R
thJA
20
25
Steady State
53
70
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
3.5
4.5
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7392DP-T1 | 功能描述:MOSFET 30V 15A 1.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7392DP-T1-E3 | 功能描述:MOSFET 30V 15A 1.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7392DP-T1-GE3 | 功能描述:MOSFET 30V 15A 5.0W 9.75mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7401DN | 制造商:AD 制造商全稱:Analog Devices 功能描述:Thermoelectric Cooler Controller |
| SI7401DN-RC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:R-C Thermal Model Parameters |
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