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參數(shù)資料
| 型號： | SI7404DN |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S) Fast-Switching MOSFET |
| 中文描述： | N通道30V（D-S）快速開關MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | SI7404DN |
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
Lilon Battery Protection
Si7404DN
Vishay Siliconix
New Product
Document Number: 71658
S-05681—Rev. C, 07-Feb-02
www.vishay.com
1
N-Channel 30-V (D-S) Fast Switching MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.013 @ V
GS
= 10 V
0.015 @ V
GS
= 4.5 V
0.022 @ V
GS
= 2.5 V
13.3
30
12.4
10.2
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
N-Channel MOSFET
G
D
S
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
12
V
T
A
= 25 C
13.3
8.5
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
10.6
6.8
Pulsed Drain Current
I
DM
40
A
Single Avalanche Current
I
AS
15
Single Avalanche Energy (Duty Cycle 1%)
0.1 mH
E
AS
11
mJ
Continuous Source Current (Diode Conduction)
a
I
S
3.2
1.3
A
T
A
= 25 C
3.8
1.5
Maximum Power Dissipation
a
T
A
= 70 C
P
D
2.0
0.8
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
26
33
Maximum Junction-to-Ambient
a
Steady State
R
thJA
65
81
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.9
2.4
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI7404DN-T1 | 功能描述:MOSFET 30V 13.3A 3.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7404DN-T1-E3 | 功能描述:MOSFET 30V 13.3A 3.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7404DN-T1-GE3 | 功能描述:MOSFET 30V 13.3A 3.8W 13mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7405BDN-T1-E3 | 功能描述:MOSFET 12V 16A 33W 13mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7405BDN-T1-GE3 | 功能描述:MOSFET 12V 16A 33W 13mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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