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參數(shù)資料
| 型號： | SI7358ADP |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 62K |
| 代理商： | SI7358ADP |
FEATURES
TrenchFET Power MOSFET
Optimized for “Low Side” Synchronous
Rectifier Operation
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
100% R
g
Tested
APPLICATIONS
DC/DC Converters
Synchronous Rectifiers
Si7358ADP
Vishay Siliconix
New Product
Document Number: 73161
S-41959—Rev. A, 25-Oct-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
30
0.0042 @ V
GS
= 10 V
0.0059 @ V
GS
= 4.5 V
23
30 5
30.5
20
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information:
Si7358ADP-T1
Si7358ADP-T1—E3 (Lead (Pb)-Free)
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
23
14
T
A
= 70 C
18
11
Pulsed Drain Current (10 s Pulse Width)
I
DM
60
A
Continuous Source Current (Diode Conduction)
a
I
S
4.5
1.6
Avalanche Current
L = 0.1 mH
I
AS
50
Maximum Power Dissipation
a
T
A
= 25 C
P
D
5.4
1.9
W
T
A
= 70 C
3.4
1.2
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
18
23
Steady State
50
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.0
1.5
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
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| SI7358DP | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI7366DP | N-Channel 20-V (D-S) MOSFET |
| SI7366DP-T1 | N-Channel 20-V (D-S) MOSFET |
| SI7368DP | N-Channel 20-V (D-S) MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7358ADP-T1-E3 | 功能描述:MOSFET 30V 23A 5.4W 4.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7358ADP-T1-GE3 | 功能描述:MOSFET 30V 23A 5.4W 4.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7358DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI7366DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET |
| SI7366DP_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET |
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