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參數(shù)資料
| 型號： | Si7370DP-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFET |
| 中文描述： | N通道60 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 56K |
| 代理商： | SI7370DP-T1 |
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK Package
with Low 1.07-mm Profile
PWM Optimized for Fast Switching
100% R
g
Tested
APPLICATIONS
Primary Side Switch for 24-V DC/DC Applications
Secondary Synchronous Rectifier
Si7370DP
Vishay Siliconix
Document Number: 71874
S-41262—Rev. D, 05-Jul-04
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
60
0.011 @ V
GS
= 10 V
0.013 @ V
GS
= 6 V
15.8
14.5
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Si7370DP-T1
Si7370DP-T1—E3 (Lead (Pb)-Free)
N-Channel MOSFET
G
D
S
Ordering Information:
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
15.8
9.6
T
A
= 70 C
12.6
7.7
Continuous Source Current
I
S
4.7
1.7
A
Pulsed Drain Current
I
DM
50
Avalanche Current
I
AS
50
Single Avalanche Energy
E
AS
125
mJ
Maximum Power Dissipation
T
A
= 25 C
P
D
5.2
1.9
W
T
A
= 70 C
3.3
1.25
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
19
24
Steady State
52
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.5
1.8
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Si7370DP-T1-E3 | N-Channel 60-V (D-S) MOSFET |
| SI7411DN | P-Channel 20-V (D-S) MOSFET |
| SI7411DN-T1-E3 | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI7370DP | N-Channel 60-V (D-S) MOSFET |
| SI7388DP | N-Channel Reduced Qg, Fast Switching MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7370DP-T1-E3 | 功能描述:MOSFET 60V 15.8A 0.011Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7370DP-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI7370DP-T1-GE3 | 功能描述:MOSFET 60V 15.8A 5.2W 11mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7374DP-T1-E3 | 功能描述:MOSFET 30V 24A 56W 5.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7374DP-T1-GE3 | 功能描述:MOSFET 30V 24A 56W 5.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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