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參數(shù)資料
| 型號(hào)： | SI7388DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Reduced Qg, Fast Switching MOSFET |
| 中文描述： | N溝道減少Q(mào)g和，快速開(kāi)關(guān)MOSFET |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | SI7388DP |
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
APPLICATIONS
DC/DC Synchronous Rectifier
Si7388DP
Vishay Siliconix
New Product
Document Number: 71919
S-21518—Rev. B, 26-Aug-02
www.vishay.com
1
N-Channel Reduced Q
g
, Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.007 @ V
GS
= 10 V
0.010 @ V
GS
= 4.5 V
19
30
15
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
19
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
15
9
Pulsed Drain Current
I
DM
50
A
Continuous Source Current (Diode Conduction)
a
I
S
4.1
1.6
T
A
= 25 C
5
1.9
Maximum Power Dissipation
a
T
A
= 70 C
P
D
3.2
1.2
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
20
25
Maximum Junction-to-Ambient (MOSFET)
a
Steady State
R
thJA
55
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
2.0
2.6
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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PDF描述 |
|---|---|
| SI7390DP | N-Channel 30-V (D-S) Fast Switching WFET |
| SI7390DP-T1 | N-Channel 30-V (D-S) Fast Switching WFET |
| SI7390DP-T1-E3 | N-Channel 30-V (D-S) Fast Switching WFET |
| SI7392ADP | N-Channel Reduced Qg, Fast Switching WFET |
| SI7392DP-T1 | N-Channel Reduced Qg, Fast Switching WFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7388DP-T1 | 制造商:Vishay Siliconix 功能描述: |
| SI7388DP-T1-E3 | 功能描述:MOSFET 30V 19A 5.0W 7.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7388DP-T1-GE3 | 功能描述:MOSFET 30V 19A 5.0W 7.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7390DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching WFET |
| SI7390DP-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching WFET |
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