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參數(shù)資料
| 型號： | SI7368DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) MOSFET |
| 中文描述： | N溝道20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 52K |
| 代理商： | SI7368DP |
FEATURES
TrenchFET Power MOSFET
Low r
DS
x Q
g
Figure of Merit
Optimized For High Frequency Conversion
APPLICATIONS
Low-Side MOSFET in Synchronous Buck
DC/DC Converters in Desktops
Low Output Voltage Synchronous Rectifier
Si7368DP
Vishay Siliconix
New Product
Document Number: 72154
S-31248—Rev. B, 16-Jun-03
www.vishay.com
1
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
20
0.0055 @ V
GS
= 10 V
0.0085 @ V
GS
= 4.5 V
20
16
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
N-Channel MOSFET
G
D
S
Oredering Information: Si7368DP-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
16
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
20
13
T
A
= 70 C
17
10
A
Pulsed Drain Current (10 s Pulse Width)
I
DM
50
Continuous Source Current (Diode Conduction)
a
I
S
4.1
1.4
Maximum Power Dissipation
a
T
A
= 25 C
P
D
5
1.7
W
T
A
= 70 C
3.2
1.1
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
20
25
Steady State
53
70
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
3.4
4.5
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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|---|---|
| Si7370DP-T1 | N-Channel 60-V (D-S) MOSFET |
| Si7370DP-T1-E3 | N-Channel 60-V (D-S) MOSFET |
| SI7411DN | P-Channel 20-V (D-S) MOSFET |
| SI7411DN-T1-E3 | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI7370DP | N-Channel 60-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7368DP-T1-E3 | 功能描述:MOSFET 20V 20A 1.7W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7368DP-T1-GE3 | 功能描述:MOSFET 20V 20A 5.0W 5.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7370ADP-T1-GE3 | 功能描述:MOSFET 60V 15.8A 5.2W 10mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7370DP | 制造商:Vishay Siliconix 功能描述: |
| SI7370DP-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 60V 9.6A 8-Pin PowerPAK SO T/R |
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