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參數(shù)資料
| 型號： | SI6991DQT-1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual P-Channel 30-V (D-S) MOSFET |
| 中文描述： | 雙P溝道30V的（D-S）MOSFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | SI6991DQT-1 |
Si6991DQ
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72230
S-31066—Rev. A, 26-May-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-1.0
-3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -24 V, V
GS
= 0 V
-1
A
V
DS
= -24 V, V
GS
= 0 V, T
J
= 55 C
-10
On-State Drain Current
a
I
D(on)
V
DS
-5 V, V
GS
= -10 V
-15
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -10 V, I
D
= -4.2 A
0.032
0.040
V
GS
= -4.5 V, I
D
= -3.2
A
0.054
0.068
Forward Transconductance
a
g
fs
V
DS
= -15 V, I
D
= -4.2 A
13
S
Diode Forward Voltage
a
V
SD
I
S
= -1.0 A, V
GS
= 0 V
-0.76
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
8
12
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -4.5 V, I
D
= -4.2 A
2.6
nC
Gate-Drain Charge
Q
gd
3.7
Turn-On Delay Time
t
d(on)
10
15
Rise Time
t
r
V
= -15 V, R
= 15
-1 A, V
GEN
= -10 V, R
G
= 6
10
15
Turn-Off Delay Time
t
d(off)
I
D
45
70
ns
Fall Time
t
f
27
40
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.0 A, di/dt = 100 A/ s
30
50
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
6
12
18
24
30
0
1
2
3
4
5
0
6
12
18
24
30
0
1
2
3
4
5
V
GS
= 10 thru 5 V
T
C
= -55 C
125 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
4 V
3 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI6991DQ-T1 | Dual P-Channel 30-V (D-S) MOSFET |
| SI6993DQ-T1 | Dual P-Channel 30-V (D-S) MOSFET |
| SI6993DQ | Dual P-Channel 30-V (D-S) MOSFET |
| SI7116DN | N-Channel 40-V (D-S) Fast Switching MOSFET |
| SI7212DN | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI6991DQ-T1-E3 | 功能描述:MOSFET 30V 4.2A 0.83W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6991DQ-T1-GE3 | 功能描述:MOSFET 30V 4.2A 1.14W 40mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6993DQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET |
| SI6993DQ_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET |
| SI6993DQ-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET |
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