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參數(shù)資料
| 型號： | SI6968BEDQ-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection |
| 中文描述： | 雙N溝道的2.5 V（GS）的MOSFET的共同排水，ESD保護 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 53K |
| 代理商： | SI6968BEDQ-T1 |
Si6968BEDQ
Vishay Siliconix
www.vishay.com
2
Document Number: 72274
S-31362—Rev. A, 30-Jun-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
1.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
4.5 V
200
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V
1
A
V
DS
= 16 V, V
GS
= 0 V, T
J
= 70 C
25
On-State Drain Current
b
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
30
A
Drain Source On State Resistance
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 6.5 A
0.0165
0.022
V
GS
= 2.5 V, I
D
= 5.5 A
0.023
0.030
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 6.5 A
30
S
Diode Forward Voltage
b
V
SD
I
S
= 1.5 A, V
GS
= 0 V
0.71
1.2
V
Dynamic
a
Total Gate Charge
Q
g
12
18
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 6.5 A
2.2
nC
Gate-Drain Charge
Q
gd
3.6
Turn-On Delay Time
t
d(on)
245
365
Rise Time
t
r
V
= 10 V, R
= 10
1 A, V
GEN
= 4.5 V, R
G
= 6
330
495
ns
Turn-Off Delay Time
t
d(off)
I
D
860
1300
Fall Time
t
f
510
765
Notes
a.
b.
For design aid only; not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
3
6
9
12
15
0.01
100
10,000
T
J
= 25 C
Gate Current vs. Gate-Source Voltage
0
2
4
6
8
10
0
3
6
9
12
15
18
Gate-Current vs. Gate-Source Voltage
-
I
G
V
GS
- Gate-to-Source Voltage (V)
-
I
G
0.1
1
10
1,000
V
GS
- Gate-to-Source Voltage (V)
A
T
J
= 150 C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI6968BEDQ-T1-E3 | 功能描述:MOSFET 20V 6.5A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6968BEDQ-T1-E3/BKN | 制造商:Vishay Siliconix 功能描述:N-CH 2.5-V (G-S) MOSFET COMMONDRAIN ESD |
| SI6968BEDQ-T1-GE3 | 功能描述:MOSFET Dual N-Ch MOSFET 20V 22mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6968DQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 2.5-V (G-S) Battery Switch |
| SI6968DQ-T1 | 功能描述:MOSFET 20V 6.5A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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