參數(shù)資料
型號(hào)： SI6413DQ
廠商： Vishay Intertechnology,Inc.
英文描述： Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 538-0011-0 00; No. of Positions: 8; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.25; Terminal Pitch (mm): 1.25; Current Rating(Amps)(Max.): 1; Operating Temperature Range (degrees C): -35 to 85; General Description: Housing; Single row; Crimping
中文描述： P通道的1.8 V（GS）的MOSFET的
文件頁(yè)數(shù)： 1/5頁(yè)
文件大小： 51K
代理商： SI6413DQ
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Load Switch
PA Switch
Charger Switch
Si6413DQ
Vishay Siliconix
New Product
Document Number: 72084
S-22384—Rev. A, 30-Dec-02
www.vishay.com
1
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.010 @ V
GS
= -4.5 V
-8.8
-20
0.013 @ V
GS
= -2.5 V
- 7.6
0.016 @ V
GS
= -1.8 V
- 6.8
Si6413DQ
D
S
S
G
1
2
3
4
8
7
6
5
D
S
S
D
TSSOP-8
Top View
S*
G
D
P-Channel MOSFET
* Source Pins 2, 3, 6 and 7
must be tied common.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-20
Gate-Source Voltage
V
GS
8
V
T
A
= 25 C
- 8.8
-7.2
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
-7.0
-5.7
Pulsed Drain Current (10 s Pulse Width)
I
DM
-30
A
Continuous Source Current (Diode Conduction)
a
I
S
-1.35
-0.95
T
A
= 25 C
1.5
1.05
Maximum Power Dissipation
a
T
A
= 70 C
P
D
1.0
0.67
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
60
83
Maximum Junction-to-Ambient
a
Steady State
R
thJA
100
120
C/W
Maximum Junction-to-Foot
Steady State
R
thJF
35
45
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料
PDF描述
SI6433BDQ P-Channel 2.5-V (G-S) MOSFET
SI6433DQ 20V P-Channel PowerTrench MOSFET
SI6434DQ Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI6435ADQ P-Channel 30-V (D-S) MOSFET
SI6436DQ N-Channel 30-V (D-S) Rated MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI6413DQ-T1-E3 功能描述:MOSFET 20V 8.8A 1.5W 10mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI6413DQ-T1-GE3 功能描述:MOSFET 20V 8.8A 1.5W 10mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI6415DQ 功能描述:MOSFET 30V/25V PCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI6415DQ-T1 功能描述:MOSFET 30V 6.5A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI6415DQ-T1-E3 功能描述:MOSFET 30V 6.5A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*