參數(shù)資料
型號： SI6404DQ
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述： 雙N溝道30 V的（副）MOSFET的肖特基二極管
文件頁數(shù)： 1/4頁
文件大?。?/td> 46K
代理商： SI6404DQ
TrenchFET Power MOSFETS: 2.5-V Rated
30-V V
DS
Battery Switch
Charger Switch
Si6404DQ
Vishay Siliconix
New Product
Document Number: 71440
S-03483—Rev. A, 16-Apr-01
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.009 @ V
GS
= 10 V
11
30
0.010 @ V
GS
= 4.5 V
10
0.014 @ V
GS
= 2.5 V
8.8
Si6404DQ
D
S
S
G
1
2
3
4
8
7
6
5
D
S
S
D
TSSOP-8
Top View
* Source Pins 2, 3, 6 and 7
must be tied common.
D
G
S*
N-Channel MOSFET
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
12
V
T
A
= 25 C
11
8.6
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
8.9
6.9
Pulsed Drain Current (10 s Pulse Width)
I
DM
30
A
Continuous Source Current (Diode Conduction)
a
I
S
1.5
0.95
T
A
= 25 C
1.75
1.08
Maximum Power Dissipation
a
T
A
= 70 C
P
D
1.14
0.69
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
55
70
Maximum Junction-to-Ambient
a
Steady State
R
thJA
95
115
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
35
45
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料
PDF描述
SI6405DQ P-Channel 12-V (D-S) MOSFET
SI6413DQ Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 538-0011-0 00; No. of Positions: 8; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.25; Terminal Pitch (mm): 1.25; Current Rating(Amps)(Max.): 1; Operating Temperature Range (degrees C): -35 to 85; General Description: Housing; Single row; Crimping
SI6433BDQ P-Channel 2.5-V (G-S) MOSFET
SI6433DQ 20V P-Channel PowerTrench MOSFET
SI6434DQ Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI6404DQ-T1 功能描述:MOSFET 30V 11A 1.75W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI6404DQ-T1-E3 功能描述:MOSFET 30V 11A 1.75W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI6404DQ-T1-GE3 功能描述:MOSFET 30V 11A 1.75W 9.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI6405DQ 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET
SI6410DQ 功能描述:MOSFET 30V/20V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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