參數(shù)資料
型號： SI5445BDC
廠商： Vishay Intertechnology,Inc.
英文描述： P-Channel, 1.8-V (G-S) MOSFET
中文描述： P溝道，1.8 - V（下GS）的MOSFET的
文件頁數(shù)： 1/1頁
文件大?。?/td> 57K
代理商： SI5445BDC
Specification Comparison
Vishay Siliconix
Document Number 74051
14-Apr-05
www.vishay.com
Si5445BDC vs. Si5445DC
Description:
Package:
Pin Out:
Part Number Replacements:
Si5445BDC-T1-E3 Replaces Si5445DC-T1-E3
Si5445BDC-T1-E3 Replaces Si5445DC-T1
Summary of Performance:
The Si5445BDC is the replacement to the original Si5445DC; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si5445BDC
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
T
A
= 25
°
C
Continuous Drain Current
T
A
= 70
°
C
Pulsed Drain Current
I
DM
Continuous Source Current
(MOSFET Diode Conduction)
T
A
= 25
°
C
Power Dissipation
T
A
= 70
°
C
Operating Junction & Storage Temperature Range
T
j
& T
stg
Maximum Junction-to-Ambient
R
thJA
SPECIFICATIONS (T
J
= 25
O
C UNLESS OTHERWISE NOTED)
P-Channel, 1.8-V (G-S) MOSFET
1206-8 ChipFET
Identical
Si5445DC
-8
+8
-7.1
-5.2
Unit
-8
+8
-7.1
-5.2
V
I
D
-20
-2.1
-20
-2.1
I
S
A
2.5
1.3
2.5
1.3
P
D
W
-55 to 150
50
-55 to 150
50
°
C
°
C/W
Si5445BDC
Typ
Si5445DC
Typ
Parameter
Symbol
Min
Max
Min
Max
Unit
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
V
GS(th)
I
GSS
I
DSS
I
D(on)
-0.45
-20
-1.0
+100
-1
-0.45
-20
NS
+100
-1
V
nA
μ
A
A
V
GS
= -4.5 V
V
GS
= -4.5 V
0.027
0.033
0.030
0.035
V
GS
= -2.5 V
0.035
0.043
0.040
0.047
Drain-Source On-Resistance
V
GS
= -1.8 V
r
DS(on)
0.050
0.060
0.052
0.062
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
g
fs
V
SD
18
-0.8
18
-0.8
S
V
-1.2
-1.2
Qg
Qgs
Qgd
Rg
14
1.8
3.3
8
21
17
2.8
2.6
NS
26
nC
t
d(on)
12
20
15
25
Turn-On Time
t
r
22
35
45
70
t
d(off)
75
115
110
165
Turn-Off Time
t
f
50
75
65
100
Source-Drain Reverse Recovery Time
t
rr
75
115
30
60
ns
相關(guān)PDF資料
PDF描述
SI5447DC P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI5447DC-T1 P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI5461EDC P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI5461EDC-T1 P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI5463EDC Heat Sink; Package/Case:TO-263; Thermal Resistance:18 C/W; Leaded Process Compatible:No; Mounting Type:PCB Surface Mount; Peak Reflow Compatible (260 C):No
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI5445BDC_08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET
SI5445BDC-T1-E3 功能描述:MOSFET 8.0 Volt 7.1 Amp 2.1 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI5445BDC-T1-GE3 功能描述:MOSFET 8.0V 7.1A 2.5W 33mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI5445DC 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel, 1.8-V (G-S) MOSFET
SI5445DC-T1 功能描述:MOSFET 8V 7.1A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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