- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368617 > Si4963BDY-T1 (Vishay Intertechnology,Inc.) Dual P-Channel 2.5-V (G-S) MOSFET PDF資料下載
參數(shù)資料
| 型號： | Si4963BDY-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 2.5-V (G-S) MOSFET |
| 中文描述： | 雙P溝道的2.5 V（GS）的MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 78K |
| 代理商： | SI4963BDY-T1 |
Si4963BDY
Vishay Siliconix
New Product
Document Number: 72753
S-40235—Rev. A, 16-Feb-04
www.vishay.com
1
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
20
0.032 @ V
GS
=
4.5 V
6.5
0.050 @ V
GS
=
2.5 V
5.2
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Ordering Information:
Si4963BDY—E3 (Lead Free)
Si4963BDY-T1—E3 (Lead Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
6.5
4.9
T
A
= 70 C
5.2
3.9
A
Pulsed Drain Current
I
DM
40
continuous Source Current (Diode Conduction)
a
I
S
1.7
0.9
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.1
W
T
A
= 70 C
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
58
62.5
Steady State
91
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
34
40
Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4967DY | Dual P-Channel 1.8-V (G-S) MOSFET |
| SI4967DY-T1 | Dual P-Channel 1.8-V (G-S) MOSFET |
| SI4973DY-T1 | Dual P-Channel 25-V (G-S) MOSFET |
| SI4982DY | Dual N-Channel 100-V (D-S) MOSFET |
| SI4982DY-T1 | Dual N-Channel 100-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4963BDY-T1-E3 | 功能描述:MOSFET 20V 6.2A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4963BDY-T1-GE3 | 功能描述:MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4963DY | 功能描述:MOSFET Dual PCh 20V 240a RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4963DY | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Vishay Siliconix 功能描述:MOSFET DUAL PP SO-8 |
| SI4963DY-E3 | 功能描述:MOSFET 20V 6.2A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。