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參數(shù)資料
| 型號： | SI4925BDY-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual P-Channel 30-V (D-S) MOSFET |
| 中文描述： | 雙P溝道30V的（D-S）MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 103K |
| 代理商： | SI4925BDY-T1-E3 |
Si4925BDY
Vishay Siliconix
www.vishay.com
2
Document Number: 72001
S-50366—Rev. C, 28-Feb-05
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
1
3
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
30 V, V
GS
= 0 V
V
DS
=
30 V, V
GS
= 0 V, T
J
= 55 C
V
DS
=
5 V, V
GS
=
10 V
V
GS
=
10 V, I
D
=
7.1 A
V
GS
=
4.5 V, I
D
=
5.5 A
V
DS
=
10
V, I
D
=
7.1 A
1
25
A
On-State Drain Current
a
I
D(on)
40
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
0.020
0.033
0.025
0.041
Forward Transconductance
a
g
fs
20
S
Diode Forward Voltage
a
V
SD
I
S
=
1.7 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
33
50
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
=
15 V,
V
=
10 V, I
=
7.1 A
DS
GS
5.4
8.9
9
12
60
34
nC
D
15
20
90
50
V
=
15 V, R
= 15
1 A, V
GEN
=
10 V, R
G
= 6
I
D
ns
Source-Drain Reverse Recovery Time
I
F
=
1.7 A, di/dt = 100 A/ s
30
60
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
0
1
2
3
4
5
0
10
20
30
40
0
1
2
3
4
5
V
GS
= 10 thru 5 V
T
C
=
55 C
125 C
4 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
3, 2 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4925BDY-T1-E3 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR MOSFET MATCHED PAIR P-CHAN 制造商:Vishay Siliconix 功能描述:DUAL P CHANNEL MOSFET, -30V, SOIC |
| SI4925BDY-T1-GE3 | 功能描述:MOSFET 30V 7.1A 2.0W 25mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4925DDY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI4925DDY-T1-E3 | 制造商:Vishay Semiconductors 功能描述: |
| SI4925DDY-T1-GE3 | 功能描述:MOSFET 30V 8.0A 5.0W 29mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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