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參數(shù)資料
| 型號： | SI4925BDY-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual P-Channel 30-V (D-S) MOSFET |
| 中文描述： | 雙P溝道30V的（D-S）MOSFET |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 103K |
| 代理商： | SI4925BDY-E3 |
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Document Number: 91000
Revision: 08-Apr-05
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相關PDF資料 |
PDF描述 |
|---|---|
| SI4925BDY-T1 | Dual P-Channel 30-V (D-S) MOSFET |
| SI4925 | Dual P-Channel 30-V (D-S) MOSFET |
| SI4925BDY | Dual p-channel SO-8 low-rDS(on) MOSFET |
| SI4925 | Dual P-Channel, Logic Level, PowerTrench MOSFET |
| SI4925DY | Dual P-Channel, Logic Level, PowerTrench MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI4925BDY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R |
| SI4925BDY-T1-E3 | 功能描述:MOSFET 30 Volt 7.1 Amp 2.0W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4925BDY-T1-E3 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR MOSFET MATCHED PAIR P-CHAN 制造商:Vishay Siliconix 功能描述:DUAL P CHANNEL MOSFET, -30V, SOIC |
| SI4925BDY-T1-GE3 | 功能描述:MOSFET 30V 7.1A 2.0W 25mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4925DDY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
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