參數(shù)資料
型號: SI4925BDY-E3
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: Dual P-Channel 30-V (D-S) MOSFET
中文描述: 雙P溝道30V的(D-S)MOSFET
文件頁數(shù): 5/6頁
文件大小: 103K
代理商: SI4925BDY-E3
Si4925BDY
Vishay Siliconix
Document Number: 72001
S-50366—Rev. C, 28-Feb-05
www.vishay.com
5
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
10
3
10
2
1
10
10
1
10
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
N
T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg72001
.
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相關代理商/技術參數(shù)
參數(shù)描述
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SI4925BDY-T1-E3 制造商:Vishay Siliconix 功能描述:TRANSISTOR MOSFET MATCHED PAIR P-CHAN 制造商:Vishay Siliconix 功能描述:DUAL P CHANNEL MOSFET, -30V, SOIC
SI4925BDY-T1-GE3 功能描述:MOSFET 30V 7.1A 2.0W 25mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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