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參數(shù)資料
| 型號： | Si4921DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual P-Channel 30-V (D-S) MOSFET |
| 中文描述： | 雙P溝道30V的（D-S）MOSFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 45K |
| 代理商： | SI4921DY |
Si4921DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72109
S-03181—Rev. A, 17-Feb-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-1
-3
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -24 V, V
GS
= 0 V
-1
A
V
DS
= -24 V, V
GS
= 0 V, T
J
= 55 C
-25
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -10 V
-30
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -10 V, I
D
= -7.3 A
0.020
0.025
V
GS
= -4.5 V, I
D
= -5.6 A
0.033
0.042
Forward Transconductance
a
g
fs
V
DS
= -10
V, I
D
= -7.3 A
16
S
Diode Forward Voltage
a
V
SD
I
S
= -1.7 A, V
GS
= 0 V
-0.8
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
33
50
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -10 V, I
D
= -7.3 A
5.8
nC
Gate-Drain Charge
Q
gd
8.6
Turn-On Delay Time
t
d(on)
10
15
Rise Time
t
r
V
= -15 V, R
= 15
-1 A, V
GEN
= -10 V, R
G
= 6
15
25
Turn-Off Delay Time
t
d(off)
I
D
110
170
ns
Fall Time
t
f
70
110
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.7 A, di/dt = 100 A/ s
60
90
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
6
12
18
24
30
0
1
2
3
4
5
V
GS
= 10 thru 5 V
T
C
= 125 C
-55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
3 V
4 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4924DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4924DY-T1 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4925BDY-T1-E3 | Dual P-Channel 30-V (D-S) MOSFET |
| SI4925BDY-E3 | Dual P-Channel 30-V (D-S) MOSFET |
| SI4925BDY-T1 | Dual P-Channel 30-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4921DY-T1 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 30V 5.5A 8-Pin SOIC N T/R |
| SI4921DY-T1-E3 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 30V 5.5A 8-Pin SOIC N T/R |
| SI4922BDY-T1-E3 | 功能描述:MOSFET DUAL N-CH 30V(D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4922BDY-T1-GE3 | 功能描述:MOSFET 30V 8.0A 3.1W 16mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4922DY | 功能描述:MOSFET 30V 12A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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