參數(shù)資料
型號(hào): SI4880DY
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel Reduced Qg, Fast Switching MOSFET
中文描述: N溝道減少Q(mào)g和,快速開關(guān)MOSFET
文件頁數(shù): 4/4頁
文件大?。?/td> 54K
代理商: SI4880DY
Si4880DY
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-4
Document Number: 70857
S-60711—Rev. A, 01-Feb-99
10
–3
10
–2
1
10
600
10
–1
10
–4
100
0.01
0
1
50
60
20
30
10
30
0.1
Single Pulse Power
Time (sec)
10
40
P
0
0.02
0.04
0.06
0.08
0.10
0
2
4
6
8
10
–1.0
–0.8
–0.6
–0.4
–0.2
–0.0
0.2
0.4
0.6
–50
–25
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
J
= 150 C
T
J
= 25 C
I
D
= 13 A
I
D
= 250 A
50
10
1
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
V
G
T
J
– Temperature ( C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
r
D
)
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
I
S
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70 C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
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