參數(shù)資料
型號： SI4880DY
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel Reduced Qg, Fast Switching MOSFET
中文描述： N溝道減少Q(mào)g和，快速開關(guān)MOSFET
文件頁數(shù)： 2/4頁
文件大?。?/td> 54K
代理商： SI4880DY
Si4880DY
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70857
S-60711—Rev. A, 01-Feb-99
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.8
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V
1
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10
V
40
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 13 A
0.0069
0.0085
V
GS
= 4.5 V, I
D
= 10 A
0.0115
0.014
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 13 A
26
S
Diode Forward Voltage
a
V
SD
I
S
= 2.3 A, V
GS
= 0 V
0.70
1.1
V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 15 V V
V
GS
= 5.0 V, I
D
= 13 A
5 0 V I
19.5
25
Gate-Source Charge
Q
gs
4.2
nC
Gate-Drain Charge
Q
gd
8.8
Turn-On Delay Time
t
d(on)
V
= 15 V, R
= 15
1 A V
1 A, V
GEN
= 10 V, R
G
= 6
15 V R
14
22
Rise Time
t
r
I
D
10 V R
9
15
Turn-Off Delay Time
t
d(off)
46
70
ns
Fall Time
t
f
30
45
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.3 A, di/dt = 100 A/ s
35
70
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
相關(guān)PDF資料
PDF描述
SI4882DY N-Channel Reduced Qg, Fast Switching MOSFET
SI4884BDY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4884BDY-T1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si4888DY N-Channel Reduced Qg, Fast-Switching MOSFET
SI4890DY N-Channel Reduced Qg; Fast-Switching MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4880DY-E3 功能描述:MOSFET 30V 13A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4880DY-T1 功能描述:MOSFET 30V 13A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4880DY-T1-E3 功能描述:MOSFET 30V 13A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4880DY-T1-GE3 功能描述:MOSFET 30V 13A 2.5W 8.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4882DY 功能描述:MOSFET 30V 11A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*