- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365550 > SI4838DY (Vishay Intertechnology,Inc.) N-Channel 12-V (D-S) MOSFET PDF資料下載
參數(shù)資料
| 型號： | SI4838DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 12-V (D-S) MOSFET |
| 中文描述： | N溝道12 V的（副）MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | SI4838DY |
Si4838DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71359
S-03662—Rev. C, 14-Apr-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 9.6 V, V
GS
= 0 V
1
A
V
DS
= 9.6 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 4.5
V
5
On-State Drain Current
a
I
D(on)
V
DS
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5
V, I
D
= 25 A
0.0024
0.003
V
GS
= 2.5 V, I
D
= 20 A
0.0031
0.004
Forward Transconductance
a
g
fs
V
DS
= 6 V, I
D
= 25 A
80
S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.75
1.1
V
Dynamic
b
Total Gate Charge
Q
g
40
60
Gate-Source Charge
Q
gs
V
DS
= 6 V,
V
GS
= 4.5 V, I
D
= 25 A
6.7
nC
Gate-Drain Charge
Q
gd
9.2
Gate Resistance
R
G
1.0
1.7
2.9
Turn-On Delay Time
t
d(on)
40
60
Rise Time
t
r
V
= 6 V, R
= 6
1 A, V
GEN
= 4.5 V, R
G
= 6
40
60
Turn-Off Delay Time
t
d(off)
I
D
140
210
ns
Fall Time
t
f
70
100
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ s
50
80
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 5 thru 2 V
25 C
T
C
= 125 C
-55 C
1.5 V
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4840DY | N-Channel 40-V (D-S) MOSFET |
| Si4840DY-T1 | N-Channel 40-V (D-S) MOSFET |
| SI4854DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4856DY | N-Channel 30-V MOSFET |
| SI4858DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4838DY-E3 | 功能描述:MOSFET 12V 25A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4838DY-T1 | 功能描述:MOSFET 12V 25A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4838DY-T1-E3 | 功能描述:MOSFET 12V 25A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4838DY-T1-GE3 | 功能描述:MOSFET 12V 25A 3.5W 3.0mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| Si4840-A10-GU | 功能描述:射頻接收器 Enhance AM/FM RX Mech tune digi dsply RoHS:否 制造商:Skyworks Solutions, Inc. 類型:GPS Receiver 封裝 / 箱體:QFN-24 工作頻率:4.092 MHz 工作電源電壓:3.3 V 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。