參數(shù)資料
型號: SI4835DY
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: P-Channel Logic Level PowerTrench MOSFET
中文描述: 8800 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 4/5頁
文件大?。?/td> 55K
代理商: SI4835DY
Si4835BDY
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72029
S-31062—Rev. C, 26-May-03
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
80
20
60
P
Single Pulse Power, Junction-to-Ambient
Time (sec)
10
-3
10
-2
1
10
600
10
-1
10
-4
100
-0.4
-0.2
0.0
0.2
0.4
0.6
-50
-25
0
25
50
75
100
125
150
I
D
= 250 A
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
V
G
T
J
- Temperature ( C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70 C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
1
600
100
10
-1
10
-2
10
40
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
T
= 25 C
Single Pulse
-
I
D
P(t) = 10
dc
0.1
I
DM
Limited
I
Limited
r
DS(on)
Limited
BV
DSS
Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
相關(guān)PDF資料
PDF描述
SI4836DY N-Channel 12-V (D-S) MOSFET
SI4838DY N-Channel 12-V (D-S) MOSFET
SI4840DY N-Channel 40-V (D-S) MOSFET
Si4840DY-T1 N-Channel 40-V (D-S) MOSFET
SI4854DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4835DY 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
SI4835DY-E3 功能描述:MOSFET 30V 8A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4835DY-REVA 制造商:Vishay Siliconix 功能描述:CORRECT PART NUMBER IS SI4835BDY-T1 - Rail/Tube
SI4835DY-T1 功能描述:MOSFET 30V 8A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4835DY-T1-E3 功能描述:MOSFET 30V 8A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube