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參數(shù)資料
| 型號： | SI4816DY-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 88K |
| 代理商： | SI4816DY-E3 |
FEATURES
LITTLE FOOT
Plus
Power MOSFET
100% R
g
Tested
G
2
S
2
N-Channel 2
MOSFET
Schottky Diode
A
G
1
D
1
N-Channel 1
MOSFET
S
1
/D
2
Si4816BDY
Vishay Siliconix
New Product
Document Number: 73026
S-41510—Rev. A, 09-Aug-04
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
Channel-1
0.0185 @ V
GS
= 10 V
0.0225 @ V
GS
= 4.5 V
0.0115 @ V
GS
= 10 V
0.016 @ V
GS
= 4.5 V
6.8
7 8
7.8
30
6.0
11.4
9.5
Channel 2
Channel-2
11 6
11.6
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
30
0.50 V @ 1.0 A
2.0
G
1
D
1
A/S
2
D
2
/S
1
A/S
2
D
2
/S
1
G
2
D
2
/S
1
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4816BDY—E3
Si4816BDY-T1—E3 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
30
V
Gate-Source Voltage
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
T
A
= 70 C
I
D
6.8
5.8
11.4
8.2
5.5
4.6
9.0
6.5
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
30
40
1
0.9
2.2
1.15
Maximum Power Dissipation
a
T
A
= 25 C
T
A
= 70 C
P
D
1.4
1.0
2.4
1.25
W
0.9
0.64
1.5
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Schottky
Parameter
Symbol
Typ
Max
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
72
90
43
53
48
60
Steady-State
100
125
82
100
80
100
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJF
51
63
25
30
28
35
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4816DY-T1 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4816DY-T1-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4820DY | N-Channel Reduced Qg, Fast Switching MOSFET |
| SI4820DY-T1 | N-Channel Reduced Qg, Fast Switching MOSFET |
| SI4828DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4816DY-T1 | 功能描述:MOSFET 30V 6.3/10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4816DY-T1-E3 | 功能描述:MOSFET 30V 6.3/10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4816DY-T1-GE3 | 功能描述:MOSFET 30V 6.3/10A 1.4/2.4W 22/13mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4818DY | 功能描述:MOSFET 30V 6.3/9.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4818DY-E3 | 功能描述:MOSFET 30V 6.3/9.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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