參數(shù)資料
型號： SI4807DY
廠商： Vishay Intertechnology,Inc.
英文描述： P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET
中文描述： P通道30:1比雙門30 V的（副）MOSFET的
文件頁數(shù)： 1/5頁
文件大?。?/td> 59K
代理商： SI4807DY
Si4807DY
Vishay Siliconix
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
www.vishay.com FaxBack 408-970-5600
2-1
P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET
V
DS
(V)
r
DS(ON)
( )
I
D
(A)
Gate 1
0.035 @ V
GS
= –10 V
6
–30
0.054 @ V
GS
= –4.5 V
4.8
Gate 2
1.3 @ V
GS
= –10 V
0.9
2.2 @ V
GS
= –4.5 V
0.7
D
G
1
S
P-Channel MOSFET
SO-8
5
6
7
8
Top View
2
3
4
1
G
2
NC
G
1
D
S
D
S
D
G
2
Parameter
Symbol
Gate 1
Gate 2
Unit
Drain-Source Voltage
V
DS
–30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
6
0.9
A
T
A
= 70 C
4.8
0.7
Pulsed Drain Current
I
DM
30
1.5
Continuous Source Current (Diode Conduction)
a
I
S
–1.25
Maximum Power Dissipationa
T
A
= 25 C
P
D
2.3
W
T
A
= 70 C
1.0
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
a
R
thJA
55
C/W
Notes
a.
Surface Mounted on FR4 Board, t
10 sec.
相關(guān)PDF資料
PDF描述
SI4810BDY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4810BDY-T1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si4810DY-T1 Paired Cable; Number of Conductors:6; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:3; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes
SI4810DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4812DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4807DY-E3 功能描述:MOSFET 30V 6/0.9A 2.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4807DY-T1 功能描述:MOSFET 30V 6/0.9A 2.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4807DY-T1-E3 功能描述:MOSFET 30V 6/0.9A 2.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4808DY 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4808DY-E3 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*