參數(shù)資料
型號(hào)： SI4812DY
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述： 雙N溝道30 V的（副）MOSFET的肖特基二極管
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 57K
代理商： SI4812DY
FEATURES
LITTLE FOOT
Plus
Power MOSFET
100% R
g
Tested
Si4812DY
Vishay Siliconix
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.018 @ V
GS
= 10 V
0.028 @ V
GS
= 4.5 V
9
7.3
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
30
0.50 V @ 1.0 A
1.4
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
G
S
Schottky Diode
D
Ordering Information:
Si4812DY
Si4812DY-T1 (with Tape and Reel)
Si4812DY—E3 (Lead (Pb)-Free)
Si4812DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Limit
Parameter
Symbol
10 sec
Steady State
Unit
Drain-Source Voltage (MOSFET)
V
DS
30
Reverse Voltage (Schottky)
30
V
Gate-Source Voltage (MOSFET)
V
GS
20
Continuous Drain Current
(T
J
= 150 C) (MOSFET)
a, b
T
A
= 25 C
I
D
9
6.9
T
A
= 70 C
7.5
5.6
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
a, b
I
DM
I
S
I
F
I
FM
50
A
2.1
1.2
Average Foward Current (Schottky)
1.4
0.8
Pulsed Foward Current (Schottky)
30
a b
Maximum Power Dissipation (MOSFET)
a, b
T
A
= 25 C
T
A
= 70 C
T
A
= 25 C
T
A
= 70 C
2.5
1.4
P
D
1.6
0.9
W
a b
Maximum Power Dissipation (Schottky)
a, b
2.0
1.2
1.3
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (t
t A bi
10 sec)
a
MOSFET
40
50
Schottky
R
thJA
50
60
C/W
Maximum Junction to Ambient (t steady state)
Maximum Junction-to-Ambient (t = steady state)
a
MOSFET
72
90
Schottky
85
100
Notes
a.
b.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Surface Mounted on FR4 Board.
t
10 sec.
相關(guān)PDF資料
PDF描述
Si4812DY-E3 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si4812DY-T1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si4812DY-T1-E3 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4814BDY Dual N-Channel, 30-V (D-S) MOSFET with Schottky Diode
SI4814DY Dual N-Channel, 30-V (D-S) MOSFET with Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4812DY-E3 功能描述:MOSFET 30V 9A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4812DY-T1 功能描述:MOSFET 30V 9A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4812DY-T1-E3 功能描述:MOSFET 30V 9A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4814BDY 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel, 30-V (D-S) MOSFET with Schottky Diode
SI4814BDY-T1-E3 功能描述:MOSFET 30V 10/10.5A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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