參數(shù)資料
型號(hào)： SI4814DY
廠商： Vishay Intertechnology,Inc.
英文描述： Dual N-Channel, 30-V (D-S) MOSFET with Schottky Diode
中文描述： 雙N溝道，30 V的（副）MOSFET的肖特基二極管
文件頁數(shù)： 1/2頁
文件大小： 156K
代理商： SI4814DY
Specification Comparison
Vishay Siliconix
Document Number 74072
11-May-05
www.vishay.com
Si4814BDY vs. Si4814DY
Description:
Package:
Pin Out:
Part Number Replacements:
Si4814BDY-T1-E3 Replaces Si4814DY-T1-E3
Si4814BDY-T1-E3 Replaces Si4814DY-T1
Summary of Performance:
The Si4814BDY is the replacement to the original Si4814DY; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Si4814BDY
Parameter
Symbol
Ch-1
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
T
A
= 25
°
C
7.5
Continuous Drain Current
T
A
= 70
°
C
Pulsed Drain Current
I
DM
Continuous Source Current
(MOSFET Diode Conduction)
T
A
= 25
°
C
1.9
Power Dissipation
T
A
= 70
°
C
1.2
Operating Junction & Storage Temperature Range
T
j
& T
stg
Maximum Junction-to-Ambient - MOSFET
R
thJA
MOSFET SPECIFICATIONS (T
J
= 25
O
C UNLESS OTHERWISE NOTED)
Dual
N-Channel, 30-V (D-S) MOSFET with Schottky Diode
SO-8
Identical
Si4814DY
Ch-1
30
+20
7.0
5.6
Ch-2
Ch-2
Unit
30
+20
V
7.8
6.3
7.8
6
I
D
6
40
1.7
40
1.8
40
1.7
40
1.8
I
S
A
2.0
1.3
1.9
1.2
2.0
1.3
P
D
W
-55 to 150
65
-55 to 150
65
°
C
°
C/W
60
60
Si4814BDY
Typ
Si4814DY
Typ
Parameter
Symbol
Min
Max
Min
Max
Unit
Static
Ch-1
1.5
3.0
0.8
NS
Gate-Threshold Voltage
V
GS(th)
Ch-2
1.5
2.7
0.8
NS
V
Ch-1
+100
+100
Gate-Body Leakage
I
GSS
Ch-2
Ch-1
+100
1
+100
1
nA
Zero Gate Voltage Drain Current
I
DSS
Ch-2
100
100
μ
A
Ch-1
20
20
On-State Drain Current
V
GS
= 10 V
I
D(on)
Ch-2
20
20
A
Ch-1
0.0145
0.018
0.0175
0.021
V
GS
= 10 V
Ch-2
0.015
0.018
0.0165
0.020
Ch-1
0.019
0.023
0.027
0.0325
Drain-Source On-Resistance
V
GS
= 4.5 V
r
DS(on)
Ch-2
0.018
0.022
0.022
0.0265
Ch-1
30
17
Forward Transconductance
g
fs
Ch-2
35
20
S
Ch-1
0.75
1.1
0.7
1.1
Diode Forward Voltage
V
SD
Ch-2
0.47
0.5
0.47
0.5
V
886-3-5753170
Http://www.100y.com.tw
886-3-5753170
86-755-83289224
Http://www.100y.com.tw
相關(guān)PDF資料
PDF描述
Si4816BDY Dual N-Channel MOSFET, 30V(D-S) , with Schottky Diode
SI4816DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4816DY-E3 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4816DY-T1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4816DY-T1-E3 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4814DY-E3 功能描述:MOSFET 30V 7/7.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4814DY-T1-E3 功能描述:MOSFET 30 Volt 7.0/7.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4816BDY 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4816BDY_09 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4816BDY-T1-E3 功能描述:MOSFET +30/+30V 7.8/11.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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