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參數(shù)資料
| 型號： | SI4810DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 53K |
| 代理商： | SI4810DY |
FEATURES
TrenchFET Power MOSFETS
Fast Switching Speed
Low Gate Charge
APPLICATIONS
DC-DC Logic Level
Low Voltage and Battery Powered
Applications
Si4810BDY
Vishay Siliconix
New Product
Document Number: 72229
S-31063—Rev. A, 26-May-03
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.0135 @ V
GS
= 10 V
0.020 @ V
GS
= 4.5 V
10
8
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
Diode Forward Voltage
V
SD
(V)
I
F
(A)
3.8
0.53 V @ 3.0 A
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
G
S
D
Schottky Diode
Ordering Information:
Si4810BDY
Si4810BDY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 sec
Steady State
Unit
Drain-Source Voltage (MOSFET)
V
DS
30
Reverse Voltage (Schottky)
30
V
Gate-Source Voltage (MOSFET)
V
GS
20
Continuous Drain Current
(T
J
= 150 C) (MOSFET)
a
T
A
= 25 C
I
D
10
7.5
T
A
= 70 C
8
6
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
a
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
I
DM
I
S
I
F
I
FM
50
A
2.3
3.8
1.25
2.4
40
Maximum Power Dissipation (MOSFET)
a
T
A
= 25 C
T
A
= 70 C
T
A
= 25 C
T
A
= 70 C
2.5
1.6
2.0
1.3
1.38
0.88
1.31
0.84
P
D
W
Maximum Power Dissipation (Schottky)
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient (t
Maximum Junction-to-Ambient (t
10 sec)
a
MOSFET
36
50
Schottky
R
thJA
44
60
Maximum Junction-to-Ambient (t = steady state)
t A bi
t (t t
d t t )
a
MOSFET
73
90
C/W
Schottky
77
95
Maximum Junction-to-Foot (t = steady state)
t F
t (t t
d t t )
a
MOSFET
R
thJF
17
21
Schottky
24
30
Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Surface Mounted on FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4812DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| Si4812DY-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| Si4812DY-T1 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| Si4812DY-T1-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4814BDY | Dual N-Channel, 30-V (D-S) MOSFET with Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4810DY-E3 | 功能描述:MOSFET 30V 10A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4810DY-T1 | 功能描述:MOSFET 30V 10A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4810DY-T1-E3 | 功能描述:MOSFET 30V 10A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4812BDY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4812BDY-E3 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 30V 7.3A 8SOIC N - Rail/Tube |
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